Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high- electron-mobility transistors by use of ac transconductance method

نویسندگان

  • X. Sun
  • O. I. Saadat
  • K. S. Chang-Liao
  • T. Palacios
  • S. Cui
  • T. P. Ma
چکیده

Articles you may be interested in Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors Appl. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique Appl. Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors Appl. A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors Appl.

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Study of gate oxide traps in HfO[subscript 2]/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

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تاریخ انتشار 2014